CA3127 Datasheet, PDF (1/7 Pages) Intersil Corporation – High Frequency NPN Transistor Array

CA3127
August 1996
High Frequency NPN Transistor Array
Features
Description
• Gain Bandwidth Product (f_T). . . . . . . . . . . . . . . . >1GHz
• Power Gain . . . . . . . . . . . . . . . . . 30dB (Typ) at 100MHz
• Noise Figure . . . . . . . . . . . . . . . . 3.5dB (Typ) at 100MHz
• Five Independent Transistors on a Common Substrate
Applications
• VHF Amplifiers
• Multifunction Combinations - RF/Mixer/Oscillator
The CA3127 consists of five general purpose silicon NPN
transistors on a common monolithic substrate. Each of the
completely isolated transistors exhibits low 1/f noise and a
value of f_T in excess of 1GHz, making the CA3127 useful
from DC to 500MHz. Access is provided to each of the termi-
nals for the individual transistors and a separate substrate
connection has been provided for maximum application flexi-
bility. The monolithic construction of the CA3127 provides
close electrical and thermal matching of the five transistors.
Ordering Information
• Sense Amplifiers
• Synchronous Detectors
• VHF Mixers
• IF Converter
• IF Amplifiers
• Synthesizers
• Cascade Amplifiers
PART
NUMBER
(BRAND)
TEMP.
RANGE (^oC)
PACKAGE
PKG.
NO.
CA3127E
-55 to 125 16 Ld PDIP
E16.3
CA3127M
(3127)
-55 to 125 16 Ld SOIC
M16.15
CA3127M96 -55 to 125 16 Ld SOIC Tape and Reel M16.15
(3127)
Pinout
CA3127
(PDIP, SOIC)
TOP VIEW
1
Q₁
2
Q₂
3
4
SUBSTRATE 5
6
Q₃
7
8
16
15
14
13
Q₅
12
11
Q₄
10
9
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
5-1
File Number 662.3