BUZ73A Datasheet, PDF (1/5 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

Semiconductor
Data Sheet
BUZ73A
October 1998 File Number 2263.1
5.8A, 200V, 0.600 Ohm, N-Channel Power
Features
[ /Title
(BUZ73
A)
/Subject
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
• 5.8A, 200V
• r_DS(ON) = 0.600Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
(5.8A, ^{transistors requiring high speed and low gate drive power.}
200V, ^{This type can be operated directly from integrated circuits.}
0.600 Formerly developmental type TA4600.
Ohm, N-
Channel ^{Ordering Information}
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
Power
MOS-
PART NUMBER
PACKAGE
BUZ73A
TO-220AB
BRAND
BUZ73A
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
FET)
NOTE: When ordering, use the entire part number.
Symbol
/Author
D
()
/Key-
words
G
(Harris
Semi-
S
conduc-
tor, N-
Channel _Packaging
Power
MOS-
JEDEC TO-220AB
FET,
TO-
220AB)
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
/Creator
()
/DOCIN
FO pdf-
mark
[ /Page-
Mode
/UseOut-
lines
/DOC-
VIEW
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998