BUZ72A Datasheet, PDF (1/6 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

Data Sheet
BUZ72A
June 1999
File Number 2262.2
9A, 100V, 0.250 Ohm, N-Channel Power
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA17401.
Ordering Information
PART NUMBER
PACKAGE
BRAND
BUZ72A
TO-220AB
BUZ72A
NOTE: When ordering, use the entire part number.
Features
• 9A, 100V
• r_DS(ON) = 0.250Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
4-23
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
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