BUZ60 Datasheet, PDF (1/5 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

Semiconductor
Data Sheet
BUZ60
October 1998 File Number 2260.1
5.5A, 400V, 1.000 Ohm, N-Channel Power
Features
[ /Title
(BUZ60
)
/Sub-
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
• 5.5A, 400V
• r_DS(ON) = 1.000Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
ject
(5.5A,
400V,
1.000
Ohm,
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA17414.
Ordering Information
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
N-Chan- ^{PART NUMBER}
PACKAGE
nel
BUZ60
TO-220AB
BRAND
BUZ60
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Power ^{NOTE: When ordering, use the entire part number.}
Symbol
MOS-
D
FET)
/Author
()
G
/Key-
words
S
(Harris
Semi-
conduc- _Packaging
tor, N-
Chan-
JEDEC TO-220AB
nel
Power
MOS-
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
FET,
TO-
220AB)
/Cre-
ator ()
/DOCIN
FO pdf-
mark
[ /Page-
Mode
/Use-
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998