BUZ45B Datasheet, PDF (1/5 Pages) Intersil Corporation – 10A, 500V, 0.500 Ohm, N-Channel Power MOSFET

Semiconductor
Data Sheet
BUZ45B
October 1998 File Number 2259.1
10A, 500V, 0.500 Ohm, N-Channel Power
Features
[ /Title
(BUZ45
B)
/Subject
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
• 10A, 500V
• r_DS(ON) = 0.500Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
(10A, ^{transistors requiring high speed and low gate drive power.}
500V, ^{This type can be operated directly from integrated circuits.}
0.500 Formerly developmental type TA17435.
Ohm, N-
Channel ^{Ordering Information}
Power
PART NUMBER
PACKAGE
BRAND
MOS- ^BUZ45B
TO-204AA
BUZ45B
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
Symbol
D
FET)
NOTE: When ordering, use the entire part number.
/Author
G
()
/Key-
S
words
(Harris
Semi- _Packaging
conduc-
tor, N-
JEDEC TO-204AA
Channel
Power
MOS-
FET,
DRAIN
(FLANGE)
TO-
204AA)
/Creator
SOURCE (PIN 2)
()
GATE (PIN 1)
/DOCIN
FO pdf-
mark
[ /Page-
Mode
/UseOut-
lines
/DOC-
VIEW
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998