BUZ45A Datasheet, PDF (1/1 Pages) Intersil Corporation – 8.3A, 500V, 0.800 Ohm, N-Channel Power MOSFET

Semiconductor
Data Sheet
BUZ45A
October 1998 File Number 2258.1
8.3A, 500V, 0.800 Ohm, N-Channel Power
Features
[ /Title
(BUZ45
A)
/Subject
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
• 8.3A, 500V
• r_DS(ON) = 0.800Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
(8.3A, ^{transistors requiring high speed and low gate drive power.}
500V, ^{This type can be operated directly from integrated circuits.}
0.800 Formerly developmental type TA17425.
Ohm, N-
Channel ^{Ordering Information}
Power
PART NUMBER
PACKAGE
BRAND
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
Symbol
MOS- ^BUZ45A
TO-204AA
BUZ45A
D
FET)
NOTE: When ordering, use the entire part number.
/Author
()
G
/Key-
words
S
(Harris
Semi-
conduc-
tor, N- _Packaging
Channel
Power
JEDEC TO-204AA
MOS-
FET,
TO-
DRAIN
(FLANGE)
204AA)
/Creator
()
/DOCIN
FO pdf-
mark
GATE (PIN 1)
SOURCE (PIN 2)
[ /Page-
Mode
/UseOut-
lines
/DOC-
VIEW
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998