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| BUZ45 Datasheet, PDF (1/1 Pages) Intersil Corporation – 9.6A, 500V, 0.600 Ohm, N-Channel Power MOSFET | |||
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Semiconductor
Data Sheet
BUZ45
October 1998 File Number 2257.1
9.6A, 500V, 0.600 Ohm, N-Channel Power
Features
MOSFET
[ /Title
(BUZ45)
IThis is an N-Channel enhancement mode silicon gate
power ï¬eld effect transistor designed for applications such
/Subject as switching regulators, switching converters, motor drivers,
(9.6A, relay drivers, and drivers for high power bipolar switching
⢠9.6A, 500V
⢠rDS(ON) = 0.600â¦
⢠SOA is Power Dissipation Limited
⢠Nanosecond Switching Speeds
500V, transistors requiring high speed and low gate drive power.
0.600 This type can be operated directly from integrated circuits.
Ohm, N- Formerly developmental type TA17435.
Channel
Power Ordering Information
MOS-
PART NUMBER
PACKAGE
BRAND
FET)
BUZ45
TO-204AA
BUZ45
⢠Linear Transfer Characteristics
⢠High Input Impedance
⢠Majority Carrier Device
Symbol
D
/Author NOTE: When ordering, use the entire part number.
()
G
/Key-
words
S
(Harris
Semi-
conduc- Packaging
tor, N-
Channel
JEDEC TO-204AA
Power
MOS-
FET.
DRAIN
(FLANGE)
TO-
204AA)
/Creator
()
/DOCIN
FO pdf-
GATE (PIN 1)
SOURCE (PIN 2)
mark
[ /Page-
Mode
/UseOut-
lines
/DOC-
VIEW
pdfmark
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998
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