BUZ32 Datasheet, PDF (1/6 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

Semiconductor
Data Sheet
BUZ32
October 1998 File Number 2416.1
9.5A, 200V, 0.400 Ohm, N-Channel Power
Features
MOSFET
[ /Title
(BUZ32)
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
/Subject _{switching regulators, switching converters, motor drivers,}
(9.5A, relay drivers, and drivers for high power bipolar switching
• 9.5A, 200V
• r_DS(ON) = 0.400Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
200V, ^{transistors requiring high speed and low gate drive power.}
0.400 ^{This type can be operated directly from integrated circuits.}
Ohm, N- Formerly developmental type TA17412.
Channel
Power ^{Ordering Information}
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
MOS-
FET)
PART NUMBER
PACKAGE
BUZ32
TO-220AB
BRAND
BUZ32
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
/Author ^{NOTE: When ordering, use the entire part number.}
Symbol
()
D
/Key-
words
(Harris
G
Semi-
conduc-
S
tor, N-
Channel
Power ^Packaging
MOS-
JEDEC TO-220AB
FET,
TO-
220AB)
/Creator
SOURCE
DRAIN
GATE
()
DRAIN (FLANGE)
/DOCIN
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mark
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998