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BUZ20 Datasheet, PDF (1/5 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | |||
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Semiconductor
Data Sheet
BUZ20
October 1998 File Number 2254.1
12A, 100V, 0.200 Ohm, N-Channel Power
Features
[ /Title
(BUZ20
)
/Subject
MOSFET
This is an N-Channel enhancement mode silicon gate power
ï¬eld effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
⢠12A, 100V
⢠rDS(ON) = 0.200â¦
⢠SOA is Power Dissipation Limited
⢠Nanosecond Switching Speeds
(12A, transistors requiring high speed and low gate drive power.
100V, This type can be operated directly from integrated circuits.
0.200 Formerly developmental type TA17411.
Ohm, N-
Channel Ordering Information
⢠Linear Transfer Characteristics
⢠High Input Impedance
⢠Majority Carrier Device
⢠Related Literature
Power
MOS-
PART NUMBER
PACKAGE
BUZ20
TO-220AB
BRAND
BUZ20
- TB334 âGuidelines for Soldering Surface Mount
Components to PC Boardsâ
FET)
NOTE: When ordering, use the entire part number.
Symbol
/Author
D
()
/Key-
words
G
(Harris
Semi-
S
conduc-
tor, N-
Channel Packaging
Power
MOS-
JEDEC TO-220AB
FET,
TO-
220AB)
/Creator
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
()
/DOCIN
FO pdf-
mark
[ /Page-
Mode
/Use-
Outlines
/DOC-
VIEW
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998
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