2N6975 Datasheet, PDF (1/4 Pages) Intersil Corporation – 5A, 400V and 500V N-Channel IGBTs

Semiconductor
2N6975, 2N6976,
2N6977, 2N6978
April 1995
5A, 400V and 500V N-Channel IGBTs
Features
Package
• 5A, 400V and 500V
• V_CE(ON) 2V
• T_FI 1µs, 0.5µs
• Low On-State Voltage
• Fast Switching Speeds
JEDEC TO-204AA
BOTTOM VIEW
EMITTER
COLLECTOR
(FLANGE)
GATE
• High Input Impedance
Applications
• Power Supplies
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
• Motor Drives
• Protection Circuits
G
Description
The 2N6975, 2N6976, 2N6977 and the 2N6978 are n-channel
enhancement-mode insulated gate bipolar transistors (IGBTs)
designed for high-voltage, low on-dissipation applications such as
switching regulators and motor drivers. These types can be operated
directly from low-power integrated circuits.
E
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
2N6975
TO-204AA
2N6976
TO-204AA
2N6977
TO-204AA
2N6978
TO-204AA
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings T_C = +25^oC, Unless Otherwise Specified.
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_CES
Collector-Gate Voltage (R_GE = 1MΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_CGR
Reverse Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_CES(REV.)
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GE
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM
Power Dissipation Total at T_C = +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Power Dissipation Derating T_C > +25^oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . T_J, T_STG
NOTE:
2N6975/2N6977
(Note 1)
400
400
5
±20
5
10
100
0.8
-55 to +150
1. JEDEC registered value.
2N6976/2N6978
(Note 1)
500
500
5
±20
5
10
100
0.8
-55 to +150
UNITS
V
V
V
V
A
A
W
W/^oC
o_C
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.
Copyright © Harris Corporation 1995
3-1
File Number 2297.2