VCR2N Datasheet, PDF (1/1 Pages) Vishay Siliconix – JFET Voltage-Controlled Resistors

C-8
01/99
VCR2N, VCR4N, VCR7N
N-Channel Silicon Voltage Controlled Resistor JFET
Â¥ Small Signal Attenuators
Â¥ Filters
Â¥ Amplifier Gain Control
Â¥ Oscillator Amplitude Control
Absolute maximum ratings at T_A = 25¡C.
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 15 V
10 mA
300 mW
2.4 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Drain Source ON Resistance
Drain Gate Capacitance
Source Gate Capacitance
V_(BR)GSS
I_GSS
V_GS(OFF)
r_ds(on)
C_dg
C_sg
VCR2N
NJ72
Min
Max
– 15
–5
– 1 – 3.5
VCR4N
NJ16
Min
Max
– 15
– 3.5
– 0.2
–7
Process
Unit
Test Conditions
V I_G = – 1 µA, V_DS = ØV
nA V_GS = – 15V, V_DS = ØV
V I_D = – 1 µA, V_DS = 10V
20
60
200
600
Ω V_GS = ØV, I_D = ØA
7.5
3
pF V_DG = 10V, I_S = ØA
7.5
3
pF V_DG = 10V, I_D = ØA
f = 1 kHz
f = 1 MHz
f = 1 MHz
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Drain Source ON Resistance
Drain Gate Capacitance
Source Gate Capacitance
V_(BR)GSS
I_GSS
V_GS(OFF)
r_ds(on)
C_dg
C_sg
VCR7N
NJ01
Min
Max
– 15
– 2.5
– 0.1
–5
Process
Unit
Test Conditions
V I_G = – 1 µA, V_DS = ØV
nA V_GS = – 15V, V_DS = ØV
V I_D = – 1 µA, V_DS = 10V
4000
8000
1.5
1.5
Ω V_GS = ØV, I_D = ØA
pF V_DG = 10V, I_S = ØA
pF V_DG = 10V, I_D = ØA
f = 1 kHz
f = 1 MHz
f = 1 MHz
VCR2N & VCR4N
TOÐ18 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
VCR7N
TOÐ72 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
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