VCR11 Datasheet, PDF (1/1 Pages) InterFET Corporation – N-Channel Silicon Voltage Controlled Resistor JFET

C-10
01/99
VCR11N
N-Channel Silicon Voltage Controlled Resistor JFET
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Â¥ Amplifier Gain Control
Â¥ Oscillator Amplitude Control
Absolute maximum ratings at T_A = 25¡C.
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 15 V
10 mA
300 mW
2.4 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Static Drain Source ON Resistance Ratio
Dynamic Electrical Characteristics
Drain Source ON Resistance
Drain Gate Capacitance
Source Gate Capacitance
V_(BR)GSS
I_GSS
V_GS(OFF)
r_DS(MIN)
r_DS(MAX)
r_ds(on)
C_dg
C_sg
VCR11N
Min
Max
– 25
– 0.2
–8
– 12
.95
1
.95
1
Process NJ26
Unit
Test Conditions
V I_G = – 1 µA, V_DS = ØV
nA V_GS = – 15V, V_DS = ØV
V I_D = 1 µA, V_DS = – 10V
V_DS = 100 mV, r_DS1 = 200Ω
V_GS1 = V_GS2, r_DS1 = 2 kΩ
70
200
Ω V_GS = ØV, I_D = ØA
7.5
pF V_DG = 10V, I_S = ØA
7.5
pF V_GS = 10V, I_D = ØA
f = 1 kHz
f = 1 MHz
f = 1 MHz
TOÐ71 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source , 2 Drain 1, 3 Gate 1,
5 Source 2, 6 Drain 2, 7 Gate 2
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