U430 Datasheet, PDF (1/1 Pages) Vishay Siliconix – Matched N-Channel Pairs

B-70
01/99
U430, U431
Dual N-Channel Silicon Junction Field-Effect Transistor
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Absolute maximum ratings at T_A = 25¡C.
Total Device Dissipation (Derate 4 mW/°C to150°C)
500 mW
Storage Temperature Range
– 65°C to +150°C
Lead Temperature
300°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Gate Source Forward Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source Forward
Transconductance
V_(BR)GSS
I_GSS
V_GS(OFF)
V_GS(F)
I_DSS
G_fs
Common Source Output Conductance G_os
Drain Gate Capacitance
C_dg
Source Gate Capacitance
C_gs
Equivalent Short Circuit
Input Noise Voltage
e¯_N
Power Match Source Admittance
g_ig
Conversion Gain
G_c
U430
U431
Min Typ Max Min Typ Max Unit
– 25
– 25
V
– 150
– 150 pA
– 150
– 150 nA
–1
–4 –2
–6 V
1
1V
12
30 24
60 mA
10 17
10 17
mS
12
12
mS
250
250 µS
0.15
0.15
µS
5
5 pF
2.5
2.5 pF
10
10
nV/√Hz
12
12
3
3
dB
Saturation Drain Current Ratio
I_DSS1/I_DSS2 0.9
1 0.9
1
Gate Source Cutoff Voltage Ratio
V_{GS(OFF)1 0.9}
1 0.9
1
V_GS(OFF)2
Transconductance Ratio
g_fs1/g_fs2
0.9
1 0.9
1
Process NJ72
Test Conditions
I_G = – 1µA, V_DS = ØV
V_GS = – 15V, V_DS = ØV
V_GS = – 15V, V_DS = ØV
V_DS = 10V, I_D = 1 nA
V_DS = ØV, I_G = 10 mA
V_DS = 10V, V_GS = ØV
T_A = 150°C
V_DS = 10V, I_D = 10 mA
V_DS = 10V, I_D = 10 mA
V_DS = 10V, I_D = 10 mA
V_DS = 10V, I_D = 10 mA
V_DS = ØV, V_GS = – 10V
V_DS = ØV, V_GS = – 10V
V_DS = 10V, I_D = 10 mA
V_DS = 10V, I_D = 10 mA
V_DS = 20V, R_L = 2 kΩ
V_GS = 1/2 V_GS(OFF)
V_DS = 10V, V_G = ØV
V_DS = 10V, I_D = 1 nA
V_DS = 10V, I_D = 10 mA
f = 1 kHz
f = 100 MHz
f = 1 kHz
f = 100 MHz
f = 1 MHz
f = 1 MHz
f = 100 kHz
f = 100 MHz
f = 100 MHz
TOÐ78 Package
Dimensions in Inches (mm)
1000 N. Shiloh Road, Garland, TX 75042
[phone] FAX [phone]
Pin Configuration
1 Source 1, 2 Gate 1, Drain 1,
4 Case, 5 Drain 2, 6 Gate 2,
7 Source 2, 8 Omitted
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