U350 Datasheet, PDF (1/1 Pages) InterFET Corporation – Hybrid Quad Silicon Junction Field-Effect Transistor Array

01/99
B-69
U350
Hybrid Quad Silicon Junction Field-Effect Transistor Array
Â¥ Analog Multiplier
Â¥ VHF Double-Balanced Mixer
Absolute maximum ratings at T_A = 25¡C.
Reverse Gate Source & Reverse Gate Drain Voltage
Gate Current
Continuous Device Power Dissipation
Power Derating
– 25 V
25 mA
400 mW
3.2 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
V_(BR)GSS
Gate Reverse Current
Gate Source Cutoff Voltage
Gate Source Forward Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Drain Source ON Resistance
Common Source
Forward Transconductance
Common Source Output Conductance
Drain Gate Capacitance
Gate Source Capacitance
I_GSS
V_GS(OFF)
V_GS(F)
I_DSS
r_ds(on)
g_fs
g_os
C_dgo
C_sgo
(Conversion Gain)
G_c
U350
Min Typ Max
– 25
–1
–1
–2
–6
1
24
60
50
90
10
18
150
2.5
5
4
Noise Figure
Saturation Drain Current Ratio
Gate Source Cutoff Voltage Ratio
Common Source
Forward Transconductance
Differential Output Conductance
NF
7
I_DSS / I_DSS 0.9
1
V_GS(OFF) / V_GS(OFF)
0.9
1
g_fs / g_fs
0.9
1
Y_os / Y_os
0.9
1
Four Matched Process NJ72L
Unit
Test Conditions
V I_G = – 1 µA, V_DS = ØV
nA V_GS = – 15V, V_DS = ØV
µA V_GS = – 15V, V_DS = ØV
V V_DS = 10V, I_D = 1 nA
V V_DS = ØV, I_G = 1 mA
mA V_DS = 15V, V_GS = ØV
T_A = 125°C
Ω V_GS = ØV, I_D = mA
f = 1 kHz
mS V_DS = 10V, I_D = 10 mA
f = 1 kHz
µS V_DS = 10V, I_D = 10 mA
f = 1 kHz
pF V_GD = – 10V, I_S = ØV
pF V_GS = – 10V, I_D = ØV
f = 1 MHz
f = 1 MHz
dB ^{VDS = 20V, VGS = 1/2 VGS(OFF)} f = 100 MHz
R_D = 1,700 Ω
dB ^{VDS = 20V, VGS = 1/2 VGS(OFF)} f = 100 MHz
R_D = 1,700 Ω
V_DS = 15V, V_DS = ØV
V_DS = 15V, I_D = 1 nA
V_DS = 15V, I_D = 10 mA
f = 1 kHz
V_DS = 15V, I_D = 10 mA
f = 1 kHz
TOÐ78 Package
Dimensions in Inches (mm)
www.interfet.com
Pin Configuration
1 Gate 1 & 3, 2 Drain 1 & 4,
3 Source 1 & 2, 4 Ground & Case,
5 Source 3 & 4, 6 Drain 2 & 3,
7 Gate 2 & 4, 8 Omitted
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