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U311 Datasheet, PDF (1/1 Pages) InterFET Corporation – N-Channel Silicon Junction Field-Effect Transistor
B-68
01/99
U311
N-Channel Silicon Junction Field-Effect Transistor
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Absolute maximum ratings at TA = 25¡C.
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 25 V
10 mA
300 mW
2.4 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
V(BR)GSS
Gate Reverse Current
Gate Source Cutoff Voltage
Gate Source Forward Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Gate Forward Transconductance
Common Gate Output Conductance
Gate Drain Capacitance
Gate Source Capacitance
IGSS
VGS(OFF)
VGS(F)
IDSS
gfg
gog
Cdg
Cgs
U311
Min Typ Max
– 25
– 150
– 150
–1
–6
1
20
60
1000 17000
250
2.5
5
Process NJ72L
Unit
Test Conditions
V IG = – 1 µA, VDS = ØV
pA VGS = – 15V, VDS = ØV
nA VGS = – 15V, VDS = ØV
V VDS = 10V, ID = 1 nA
V VDS = ØV, IG = 1 mA
mA VDS = 10V, VGS = ØV
TA = 150°C
µS VDS = 10V, ID = 10 mA
µS VDS = 10V, ID = 10 mA
pF VDS = 10V, ID = 10 mA
pF VDS = 10V, ID = 10 mA
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
TOÐ72 Package
Dimensions in Inches (mm)
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
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