U310 Datasheet, PDF (1/1 Pages) Micross Components – Linear Systems replaces discontinued Siliconix U310

01/99
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B-67
U310
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T_A = 25¡C.
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 25 V
20 mA
500 mW
4 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Gate Source Forward Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
V_(BR)GSS
I_GSS
V_GS(OFF)
V_GS(F)
I_DSS
Common Gate Forward Transconductance g_fg
Common Gate Output Conductance
g_og
Drain Gate Capacitance
C_dg
Gate Source Capacitance
C_gs
Equivalent Short Circuit
Input Noise Voltage
e¯_N
Common Gate Power Gain
G_pg
Noise Figure
NF
Min
– 25
– 2.5
24
U310
Typ Max
– 150
– 150
–6
1
60
Process NJ72L
Unit
Test Conditions
V I_G = – 1 µA, V_DS = ØV
pA V_GS = – 15V, V_DS = ØV
nA V_GS = – 15V, V_DS = ØV
V V_DS = 10V, I_D = 1 nA
V V_DS = ØV, I_G = 10 mA
mA V_DS = 10V, V_GS = ØV
T_A = 125°C
10
17
mS V_DS = 10V, I_D = 10 mA
15
mS V_DS = 10V, I_D = 10 mA
14
mS V_DS = 10V, I_D = 10 mA
250 µS V_DS = 10V, I_D = 10 mA
0.18
µS V_DS = 10V, I_D = 10 mA
0.32
µS V_DS = 10V, I_D = 10 mA
2.5
pF V_DS = 10V, V_GS = – 10V
5
pF V_DS = 10V, V_GS = – 10V
10
nV/√Hz V_DS = 10V, I_D = 10 mA
14
16
dB V_DS = 10V, I_D = 10 mA
10
11
dB V_DS = 10V, I_D = 10 mA
1.5
2
dB V_DS = 10V, I_D = 10 mA
2.7
3.5
dB V_DS = 10V, I_D = 10 mA
f = 1 kHz
f = 105 MHz
f = 450 MHz
f = 1 kHz
f = 105 MHz
f = 450 MHz
f = 1 MHz
f = 1 MHz
f = 100 Hz
f = 105 MHz
f = 450 MHz
f = 105 MHz
f = 450 MHz
TOÐ52 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
Surface Mount
SMPJ310
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