U309 Datasheet, PDF (1/1 Pages) New Jersey Semi-Conductor Products, Inc. – N-Channel JFETs

B-66
01/99
U308, U309
N-Channel Silicon Junction Field-Effect Transistor
Â¥ Mixers
Â¥ Oscillators
Â¥ VHF/UHF Amplifiers
Absolute maximum ratings at T_A = 25¡C.
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 25 V
20 mA
500 mW
4 mw/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Gate Source Forward Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Gate Forward
Transconductance
Common Gate Output Conductance
Drain Gate Capacitance
Gate Source Capacitance
Equivalent Short Circuit
Input Noise Voltage
Common Gate Power Gain
Noise Figure
V_(BR)GSS
I_GSS
V_GS(OFF)
V_GS(F)
I_DSS
G_fs
G_og
C_dg
C_gs
e¯_N
G_pg
NF
U308
U309
Min Typ Max Min Typ Max Unit
– 25
– 25
V
– 150
– 150 pA
– 150
– 150 nA
–1
–6 –1
–4 V
1
1V
12
60 12
30 mA
Process NJ72
Test Conditions
V_GS = – 1µA, V_DS = ØV
V_GS = – 15V, V_DS = ØV
V_GS = – 15V, V_DS = ØV
V_DS = 10V, I_D = 1 nA
V_DS = ØV, I_G = 10 mA
V_DS = 10V, V_GS = ØV
T_A = +125°C
10 17
10 17
mS
15
15
mS
14
14
mS
250
250 µS
0.18
0.18
µS
0.32
0.32
µS
2.5
2.5 pF
5
5
pF
V_DS = 10V, I_D = 10 mA
V_DS = 10V, I_D = 10 mA
V_DS = 10V, I_D = 10 mA
V_DS = 10V, I_D = 10 mA
V_DS = 10V, I_D = 10 mA
V_DS = 10V, I_D = 10 mA
V_DS = 10V, V_GS = – 10V
V_DS = 10V, V_GS = – 10V
10
10
nV/√Hz V_DS = 10V, I_D = 10 mA
14 16
14 16
dB
10 11
10 11
dB
1.5 2
1.5 2 dB
2.7 3.5
2.7 3.5 dB
V_DS = 10V, I_D = 10 mA
V_DS = 10V, I_D = 10 mA
V_DS = 10V, I_D = 10 mA
V_DS = 10V, I_D = 10 mA
f = 1 kHz
f = 105 MHz
f = 450 MHz
f = 1 kHz
f = 105 MHz
f = 450 MHz
f = 1 MHz
f = 1 MHz
f = 100 kHz
f = 105 MHz
f = 450 MHz
f = 105 MHz
f = 450 MHz
1000 N. Shiloh Road, Garland, TX 75042
[phone] FAX [phone]
TOÐ52 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
Surface Mount
SMPJ308/J309
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