U290 Datasheet, PDF (1/1 Pages) InterFET Corporation – N-Channel Silicon Junction Field-Effect Transistor

01/99
B-65
U290, U291
N-Channel Silicon Junction Field-Effect Transistor
Â¥ Choppers
Â¥ Low On Resistance Switches
Absolute maximum ratings at T_A = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 30 V
100 mA
500 mW
4 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Drain Cutoff Current
Drain Source ON Voltage
Static Drain Source ON Resistance
Dynamic Electrical Characteristics
Drain Source ON Resistance
Drain Gate OFF Capacitance
Source Gate OFF Capacitance
Source Gate Plus Drain Gate
Switching Characteristics
Turn ON Delay Time
Rise Time
Turn OFF Delay Time
Fall Time
V_(BR)GSS
I_GSS
V_GS(OFF)
I_DSS
I_D(OFF)
V_DS(ON)
r_DS(ON)
U290
U291
Min Max Min Max Unit
– 30
– 30
V
–1
– 1 nA
–1
– 1 µA
– 4 – 10 – 1.5 – 4.5 V
500
200
mA
1
1 nA
1
1 µA
30
70 mV
1 3 2 7Ω
Process NJ1800D
Test Conditions
I_G = – 1 µA, V_DS = ØV
V_GS = – 15V, V_DS = ØA
V_GS = – 15V, V_DS = ØA
V_DS = 15V, I_D = 3 nA
V_DS = 10V, V_GS = ØV
V_DS = 5V, V_GS = – 10V
V_DS = 5V, V_GS = – 10V
V_GS = ØV, I_D = 10 mA
V_GS = ØV, I_D = 10 mA
T_A = 150°C
T_A = 150°C
r_ds(on)
C_dgo
C_sgo
C_iss
1 3 2 7Ω
30
30 pF
30
30 pF
160
160 pF
V_GS = ØV, I_D = Ø
V_DG = 15V, I_S = ØV
V_DG = 15V, I_S = ØV
V_DG = ØV, V_GS = ØV
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
td_(on)
t_r
td_(off)
t_f
15
15 ns
V_DD = 1.5V, I_D(ON) = 30 mA
20
20 ns
R_L = 50Ω
V_GS(ON) = ØV
15
15 ns
(U290) V_GS(OFF) = – 12 V
20
20 ns
(U291) V_GS(OFF) = – 7V
TOÐ52 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
www.interfet.com
1000 N. Shiloh Road, Garland, TX 75042
[phone] FAX [phone]