U232 Datasheet, PDF (1/1 Pages) InterFET Corporation – N-Channel Dual Silicon Junction Field-Effect Transistor

8/2014
U232
N-Channel Dual Silicon Junction Field-Effect Transistor
∙ Differencial Amplifier
∙ Low & Maximum Frequency
Amplifier
Absolute maximum ratings at T_A = 25^oC
Reverse Gate Source & Gate Drain Voltage -50V
Continuous Forward Gate Current
50 mA
Continuous Device Power Dissipation 300 mW
Power Derating
1.7 mW/^oC
Storage Temperature Range
-65^oC to +150^oC
At 25^oC free air temperature
U232
Static Electrical Characteristics
Min Typ Max
Gate Source Breakdown
Voltage
V_(BR)GSS -50
Gate Reverse Current
I_GSS
-0.1
Gate Source Cutoff Voltage
V_GS(OFF) -0.5
-4.5
Drain Saturation Current
I_DSS
0.5
5
(pulsed)
Unit
V
nA
V
mA
Process NJ16
Test Conditions
I_G = -1 uA, V_DS = 0 V
V_GS = -10 V, V_DS = 0 V
V_DS = 10 V, V_GS = 0 V
V_DS = 10 V, V_GS = 0 V
Dynamic Electrical Characteristics
Common-Source Forward
Transconductance
g_fs
1
3
mS V_DS = 10 V, VGS = 0 V f = 1 kHz
Common-Source Input
Capacitance
C_iss
6
pF V_DS = 10V, I_D = 5 mA f = 1 MHz
Common-Source Reverse
Transfer Capacitance
C_rss
2
pF V_DS = 10 V, I_D = 5 mA f = 1 MHz
Equivalent Short Circuit Input
Noise Voltage
~e_N
80 nV/√Hz V_DS = 10 V, I_D = 5 mA f = 100 Hz
Matching Characteristics
Min
Differencial Gate-Source Voltage
Differencial Gate Source Voltage
with Temperature
(VGS1-VGS2)
Δ│VGS1-
VGS2│
ΔT
Max
10
25
Units
mV
μV/°C
Test Conditions
VDS = 10 V, ID = -10 mA
VDG = 10 V, ID = 30 μA
Surface Mount Version:
SMPU232
715 N. Glenville Dr., Ste. 400
Richardson, TX 75089
[phone] Fax [phone]
www.interfet.com