P1086 Datasheet, PDF (1/1 Pages) Fairchild Semiconductor – P-Channel Switch

01/99
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B-63
P1086, P1087
P-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T_A = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
30 V
50 mA
360 mW
3.27 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Saturation Drain Current (Pulsed)
Drain Cutoff Current
Drain Reverse Current
Drain Source ON Voltage
Static Drain Source ON Resistance
Dynamic Electrical Characteristics
Drain Source ON Resistance
Common Source Input Capacitance
Common Source
Reverse Transfer Capacitance
Switching Characteristics
Turn ON Delay Time
Rise Time
Turn OFF Delay Time
Fall Time
V_(BR)GSS
I_GSS
V_GS(OFF)
I_DSS
I_D(OFF)
I_DGO
V_DS(ON)
r_DS(ON)
P1086
P1087
Min Max Min Max Unit
30
30
V
2
2 nA
10
5V
– 10
– 5.0
mA
– 10
– 10 nA
– 0.5
– 0.5 µA
2
2 nA
0.1
0.1 µA
– 0.5
– 0.5 V
– 0.5
– 0.5 V
75
150 Ω
Process PJ99
Test Conditions
I_G = 1 µA, V_DS = ØV
V_GS = 15V, V_DS = ØV
V_DS = – 15V, I_D = – 1 µA
V_DS = – 20V, V_GS = ØV
V_DS = – 15V, V_GS = 12V (P1086)
V_GS = 7V (P1087)
V_DG = – 15V, I_S = ØA
V_DG = – 15V, I_S = ØA
V_GS = ØV, I_D = – 6 mA (P1086)
V_GS = ØV, I_D = – 3 mA (P1087)
I_D = – 1 mA, V_GS = ØV
T_A = 85°C
T_A = 85°C
r_ds(on)
C_iss
C_rss
75
150 Ω
I_D = Ø, V_GS = ØV
f = 1 kHz
45
45 pF
V_DS = – 15V, V_GS = ØV
f = 1 kHz
10
10
10 pF
10 pF
V_DS = ØV, V_GS = 12V (P1086)
V_DS = ØV, V_GS = 7V (P1087)
f = 1 MHz
td_(on)
t_r
td_(off)
t_f
15
15 ns
V_DD = – 6V, V_GS(ON) = ØV
20
75 ns
P1086 P1087
V_GS(OFF)
12
7
V
15
25 ns
V_D(ON)
–6
–3
MA
50
100 ns
R_L
910
1.8 K
Ω
TOÐ226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate
www.interfet.com
Surface Mount
SMPP1086, SMPP1087
1000 N. Shiloh Road, Garland, TX 75042
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