NJ903L Datasheet, PDF (1/2 Pages) InterFET Corporation – Silicon Junction Field-Effect Transistor

F-42
NJ903L Process
Silicon Junction Field-Effect Transistor
Â¥ Low-Current
Â¥ Low Gate Leakage Current
Â¥ High Input Impedance
Absolute maximum ratings at 25¡C free-air temperature.
Gate Current, Ig
10 mA
Operating Junction Temperature, Tj
+150°C
Storage Temperature, Ts
– 65°C to +175°C
Device in this Databook based on the NJ903L Process.
Datasheet
IF9030
01/99
G
S-D
D-S
S-D
D-S
G
Die Size = 0.040" X 0.040"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
NJ903L Process
Min Typ Max Unit
Test Conditions
V_(BR)GSS – 20 – 25
V I_G = – 1 µA, V_DS = ØV
I_GSS
– 5 – 500 pA V_GS = – 15V, V_DS = ØV
I_DSS
5
500 mA V_DS = 10V, V_GS = ØV
V_GS(OFF) – 0.1
–3
V V_DS = 10V, I_D = 1 nA
C_iss
50
pF V_DS = ØV, V_GS = – 10V
f = 1 MHz
C_rss
18
pF V_DS = ØV, V_GS = – 10V
f = 1 MHz
e¯_N
0.5
nV/√HZ V_DG = 4V, I_D = 5 mA
f = 1 kHz
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