NJ903 Datasheet, PDF (1/2 Pages) InterFET Corporation – Silicon Junction Field-Effect Transistor

F-40
NJ903 Process
Silicon Junction Field-Effect Transistor
Â¥ Analog Switch
Â¥ Digital Switch
Â¥ Low-Noise Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
10 mA
Operating Junction Temperature, Tj
+150°C
Storage Temperature, Ts
– 65°C to +175°C
Devices in this Databook based on the NJ903 Process.
Datasheet
IFN5432
IFN5433
IFN5434
01/99
G
S-D
D-S
S-D
D-S
G
Die Size = 0.040" X 0.040"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Drain Source ON Resistance
Input Capacitance
Feedback Capacitance
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
V_(BR)GSS
I_GSS
I_DSS
V_GS(OFF)
Min Typ Max
– 25 – 40
– 0.1 – 1
100
900
–2
–7
NJ903 Process
Unit
Test Conditions
V I_G = – 1 µA, V_DS = ØV
nA V_GS = – 15V, V_DS = ØV
mA V_DS = 10V, V_GS = ØV
V V_DS = 10V, I_D = 1 nA
r_ds(on)
C_iss
C_iss
t_d(on)
t_r
t_d(off)
t_f
5
Ω I_D = 1 mA, V_GS = Ø
f = 1 kHz
45
pF V_DS = ØV, V_GS = – 10V
f = 1 MHz
22
pF V_DS = ØV, V_GS = – 10V
f = 1 MHz
7
ns
1
ns ^{VDD = 1.5V, ID(ON) = 30 mA}
12
ns ^{RL = 50 Ω, VGS(ON) = ØV}
2
ns ^{VGS(OFF) = – 7V}
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