NJ72 Datasheet, PDF (1/2 Pages) InterFET Corporation – Silicon Junction Field-Effect Transistor

F-26
NJ72 Process
Silicon Junction Field-Effect Transistor
Â¥ VHF/UHF Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
10 mA
Operating Junction Temperature, Tj
+150°C
Storage Temperature, Ts
– 65°C to +175°C
Devices in this Databook based on the NJ72 Process.
Datasheet
IFN5564, IFN5565
IFN5566
J308, J309
J308, J309
J310
Datasheet
U308, U309
U430, U431
VCR2N
01/99
G
S-D
S-D
G
Die Size = 0.020" X 0.020"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Forward Transconductance
Drain Source ON Resistance
Input Capacitance
Feedback Capacitance
NJ72 Process
Min Typ Max Unit
Test Conditions
V_(BR)GSS – 25 – 40
V I_G = – 1 µA, V_DS = ØV
I_GSS
– 10 – 100 pA V_GS = – 15V, V_DS = ØV
I_DSS
5
90
mA V_DS = 15V, V_GS = ØV
V_GS(OFF)
–1
– 5.5 V V_DS = 15V, I_D = 1 nA
g_fs
r_ds(on)
C_iss
C_rss
22
mS V_DS = 15V, V_GS = ØV
f = 1 kHz
40
Ω I_D = 1 mA, V_GS = ØV
f = 1 kHz
6.5
pF V_DS = ØV, V_GS = – 10V
f = 1 MHz
2.5
pF V_DS = ØV, V_GS = – 10V
f = 1 MHz
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