NJ450L Datasheet, PDF (1/2 Pages) InterFET Corporation – Silicon Junction Field-Effect Transistor

F-38
NJ450L Process
Silicon Junction Field-Effect Transistor
Â¥ Low-Current
Â¥ Low Gate Leakage Current
Â¥ High Input Impedance
Absolute maximum ratings at 25¡C free-air temperature.
Gate Current, Ig
10 mA
Operating Junction Temperature, Tj
+150°C
Storage Temperature, Ts
– 65°C to +175°C
Devices in this Databook based on the NJ450L Process.
Datasheet
2N6550
IF4500
IF4501
IFN860
01/99
G
S-D
S-D
G
Die Size = 0.028" X 0.028"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Forward Transconductance (Pulsed)
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
NJ450L Process
Min Typ Max Unit
Test Conditions
V_(BR)GSS – 25 – 25
I_GSS
– 50
I_DSS
5
V_GS(OFF) – 0.1
–4
V I_G = – 1 µA, V_DS = ØV
pA V_GS = – 15V, V_DS = ØV
mA V_DS = 15V, V_GS = ØV
V V_DS = 15V, I_D = 1 nA
g_fs
100
mS V_DS = 15V, V_GS = ØV
f = 1 kHz
C_iss
35
pF V_DS = ØV, V_GS = – 10V
f = 1 MHz
C_rss
10
pF V_DS = ØV, V_GS = – 10V
f = 1 MHz
e¯_N
0.9
nV/√HZ V_DG = 4V, I_D = 5 mA
f = 1 kHz
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