NJ450 Datasheet, PDF (1/2 Pages) InterFET Corporation – Silicon Junction Field-Effect Transistor

F-36
NJ450 Process
Silicon Junction Field-Effect Transistor
Â¥ LOW R(on) Switch
Â¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
10 mA
Operating Junction Temperature, Tj
+150°C
Storage Temperature, Ts
– 65°C to +175°C
Devices in this Databook based on the NJ450 Process.
Datasheet
2SK363
IFN146, IFN147
IFN363
J108, J109
J110, J110A
01/99
G
S-D
S-D
G
Die Size = 0.028" X 0.028"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Drain Source ON Resistance
Forward Transconductance
Input Capacitance
Feedback Capacitance
V_(BR)GSS
I_GSS
I_DSS
V_GS(OFF)
Min
– 25
5
– 0.1
NJ450 Process
Typ Max Unit
Test Conditions
– 30
V I_G = – 1 µA, V_DS = ØV
– 50 – 1000 pA V_GS = – 15V, V_DS = ØV
600 mA V_DS = 15V, V_GS = ØV
– 10
V V_DS = 15V, I_D = 1 nA
r_ds(on)
g_fs
C_iss
C_rss
7
Ω I_D = 1 mA, V_GS = ØV
f = 1 kHz
250
mS V_DS = 15V, V_GS = ØV
f = 1 kHz
20
pF V_DS = ØV, V_GS = – 10V
f = 1 MHz
10
pF V_DS = ØV, V_GS = – 10V
f = 1 MHz
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