NJ42 Datasheet, PDF (1/2 Pages) InterFET Corporation – Silicon Junction Field-Effect Transistor

F-24
NJ42 Process
Silicon Junction Field-Effect Transistor
Â¥ General Purpose Amplifier
Â¥ High Breakdown Voltage
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
10 mA
Operating Junction Temperature, Tj
+150°C
Storage Temperature, Ts
– 65°C to +175°C
Devices in this Databook based on the NJ42 Process.
Datasheet
2N6449, 2N6450
IFN6449, IFN6450
01/99
S
D
S
Die Size = 0.032" X 0.032"
All Bond Pads = 0.004", Dia.
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Forward Transconductance
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
Min Typ Max
V_(BR)GSS – 300 – 400
I_GSS
– 1 – 10
I_DSS
2
10
V_GS(OFF)
–2
– 12
NJ42 Process
Unit
Test Conditions
V I_G = 1 µA, V_DS = ØV
nA V_GS = – 150V, V_DS = ØV
mA V_DS = 30V, V_GS = ØV
V V_DS = 30V, I_D = 1 nA
g_fs
800
µS V_DS = 30V, V_GS = ØV
f = 1 kHz
C_iss
6
10
pF V_DS = 30V, V_GS = ØV
f = 1 MHz
C_rss
2
5
pF V_DS = 30V, V_GS = ØV
f = 1 MHz
e¯_N
10
nV/√HZ V_DS = 15V, V_GS = ØV
f = 1 kHz
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