NJ36D Datasheet, PDF (1/2 Pages) InterFET Corporation – Silicon Junction Field-Effect Transistor

F-22
NJ36D Process
Silicon Junction Field-Effect Transistor
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Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
10 mA
Operating Junction Temperature, Tj
+150°C
Storage Temperature, Ts
– 65°C to +175°C
Devices in this Databook based on the NJ36D Process.
Datasheet
2N5911, 2N5912
IFN5911, IFN5912
01/99
S
G
D
D
G
S
Die Size = 0.026" X 0.026"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Drain Source ON Resistance
Forward Transconductance
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
Differential Gate Source Voltage
NJ36D Process
Min Typ Max Unit
Test Conditions
V_(BR)GSS – 25 – 35
I_GSS
0.05 0.1
I_DSS
1
40
V_GS(OFF) – 0.5
–8
V I_G = – 1 mA, V_DS = ØV
nA V_GS = – 15V, V_DS = ØV
mA V_DS = 15V, V_GS = ØV
V V_DS = 15V, I_D = 1 nA
r_ds(on)
90
g_fs
C_iss
C_rss
e¯_N
V_GS1– V_GS2 5
250
Ω I_D = Ø mA, V_GS = ØV
8.5
mS V_DS = 15V, V_GS = ØV
5.5
7.0
pF V_DS = 10V, V_GS = ØV
1.5
3
pF V_DS = 10V, V_GS = ØV
5
nV/√HZ V_DS = 15V, I_D = 5 mA
20 100 mV V_DG = 15V, I_D = 5 mA
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 kHz
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