NJ3600L Datasheet, PDF (1/2 Pages) InterFET Corporation – Silicon Junction Field-Effect Transistor Large Capacitance Detector Pre-Amplifier

F-48
NJ3600L Process
Silicon Junction Field-Effect Transistor
Â¥ Large Capacitance Detector Pre-Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
10 mA
Operating Junction Temperature, Tj
+150°C
Storage Temperature, Ts
– 65°C to +175°C
Device in this Databook based on the NJ3600L Process.
Datasheet
IF3601
IF3602
01/99
S-D
S-D S-D G
G D-S D-S
D-S
Die Size = 0.074" X 0.074"
All Bond Pads ≥ 0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Drain Source ON Resistance
Forward Transconductance (Pulsed)
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
NJ3600L Process
Min Typ Max Unit
Test Conditions
V_(BR)GSS
I_GSS
I_DSS
V_GS(OFF)
– 15 – 22
100 1000
50
1000
– 0.5
–3
V I_G = 1 µA, V_DS = ØV
pA V_GS = 10V, V_DS = ØV
mA V_DS = 10V, V_GS = ØV
V V_DS = 10V, I_D = 1 nA
r_ds(on)
g_fs
C_iss
C_rss
e¯_N
1
4
Ω I_D = 1 mA, V_GS = ØV
750
mS V_DS = 10V, V_GS = ØV
650
pF V_DS = 10V, V_GS = ØV
80
pF V_DS = 10V, V_GS = ØV
0.35
nV/√HZ V_DG = 3V, I_D = 5 mA
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 30 Hz
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