NJ32 Datasheet, PDF (1/3 Pages) InterFET Corporation – Silicon Junction Field-Effect Transistor General Purpose Amplifier

F-18
NJ32 Process
Silicon Junction Field-Effect Transistor
Â¥ General Purpose Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
10 mA
Operating Junction Temperature, Tj
+150°C
Storage Temperature, Ts
– 65°C to +175°C
Devices in this Databook based on the NJ32 Process.
Datasheet
2N3821, 2N3822
2N3823, 2N3824
2N4222, 2N4222A
01/99
G
S-D
S-D
G
Die Size = 0.018" X 0.018"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Forward Transconductance
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
NJ32 Process
Min Typ Max Unit
Test Conditions
V_(BR)GSS – 25 – 50
V I_G = – 1 µA, V_DS = ØV
I_GSS
– 10 – 100 pA V_GS = – 15V, V_DS = ØV
I_DSS
1
22
mA V_DS = 15V, V_GS = ØV
V_GS(OFF) – 0.5
–6
V V_DS = 15V, I_D = 1 nA
g_fs
4
mS V_DS = 15V, V_GS = ØV
f = 1 kHz
C_iss
6
7.0
pF V_DS = 15V, V_GS = ØV
f = 1 MHz
C_rss
1.3
3
pF V_DS = 15V, V_GS = ØV
f = 1 MHz
e¯_N
7
nV/√HZ V_DS = 10V, I_D = 5 mA
f = 1 kHz
1000 N. Shiloh Road, Garland, TX 75042
[phone] FAX [phone]
www.interfet.com