NJ26L Datasheet, PDF (1/2 Pages) InterFET Corporation – Silicon Junction Field-Effect Transistor Low-Noise, High Gain Amplifier

F-12
NJ26L Process
Silicon Junction Field-Effect Transistor
Â¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
10 mA
Operating Junction Temperature, Tj
+150°C
Storage Temperature, Ts
– 65°C to +175°C
Devices in this Databook based on the NJ26L Process.
Datasheet
2N5397, 2N5398
J210, J211, J212
01/99
G
S-D
S-D
G
Die Size = 0.016" X 0.016"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Forward Transconductance
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
NJ26L Process
Min Typ Max Unit
Test Conditions
V_(BR)GSS – 25 – 30
V I_G = – 1 µA, V_DS = ØV
I_GSS
– 10 – 100 pA V_GS = – 15V, V_DS = ØV
I_DSS
2
40
mA V_DS = 15V, V_GS = ØV
V_GS(OFF) – 0.5
–6
V V_DS = 15V, I_D = 1 nA
g_fs
8
mS V_DS = 15V, V_GS = ØV
f = 1 kHz
C_iss
5
pF V_DS = 15V, V_GS = ØV
f = 1 MHz
C_rss
1.5
pF V_DS = 15V, V_GS = ØV
f = 1 MHz
e¯_N
2.5
nV/√HZ V_DS = 15V, I_D = 5 mA
f = 1 kHz
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