NJ1800DL Datasheet, PDF (1/2 Pages) InterFET Corporation – Silicon Junction Field-Effect Transistor

F-46
NJ1800DL Process
Silicon Junction Field-Effect Transistor
Â¥ Low-Current
Â¥ Low Gate Leakage Current
Â¥ High Input Impedance
Â¥ Low-Noise
Absolute maximum ratings at 25¡C free-air temperature.
Gate Current, Ig
10 mA
Operating Junction Temperature, Tj
+150°C
Storage Temperature, Ts
– 65°C to +175°C
Device in this Databook based on the NJ1800DL Process.
Datasheet
IF1801
01/99
D
G
S
Die Size = 0.052" X 0.052"
All Bond Pads ≥ 0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Forward Transconductance (Pulsed)
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
NJ1800DL Process
Min Typ Max Unit
Test Conditions
V_(BR)GSS – 15 – 25
V I_G = – 1 µA, V_DS = ØV
I_GSS
– 30 – 100 pA V_GS = – 10V, V_DS = ØV
I_DSS
50
800 mA V_DS = 10V, V_GS = ØV
V_GS(OFF) – 0.1
–4
V V_DS = 10V, I_D = 1 nA
g_fs
350
mS V_DS = 10V, V_GS = ØV
f = 1 kHz
C_iss
160
pF I_D = 1 mA, V_GS = ØV
f = 1 MHz
C_rss
50
pF V_DS = 10V, V_GS = ØV
f = 1 MHz
e¯_N
0.7
nV/√HZ V_DG = 4V, I_D = 5 mA
f = 1 kHz
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