NJ1800D Datasheet, PDF (1/2 Pages) InterFET Corporation – Silicon Junction Field-Effect Transistor

F-44
NJ1800D Process
Silicon Junction Field-Effect Transistor
Â¥ Ultra Low-Noise Pre-Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
10 mA
Operating Junction Temperature, Tj
+150°C
Storage Temperature, Ts
– 65°C to +175°C
Devices in this Databook based on the NJ1800D Process.
Datasheet
U290, U291
01/99
D
G
S
Die Size = 0.052" X 0.052"
All Bond Pads ≥ 0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Forward Transconductance (Pulsed)
Drain Source ON Resistance
Input Capacitance
Feedback Capacitance
NJ1800D Process
Min Typ Max Unit
Test Conditions
V_(BR)GSS – 20 – 30
V I_G = – 1 µA, V_DS = ØV
I_GSS
– 30 – 100 pA V_GS = – 10V, V_DS = ØV
I_DSS
50
1000 mA V_DS = 10V, V_GS = ØV
V_GS(OFF) – 0.1
–7
V V_DS = 10V, I_D = 1 nA
g_fs
r_ds(on)
C_iss
C_rss
350
mS V_DS = 10V, V_GS = ØV
2
7
Ω I_D = 1 mA, V_GS = ØV
100
pF V_DS = 10V, V_GS = ØV
50
pF V_DS = 10V, V_GS = ØV
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
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