NJ14AL Datasheet, PDF (1/2 Pages) InterFET Corporation – Silicon Junction Field-Effect Transistor

F-4
NJ14AL Process
Silicon Junction Field-Effect Transistor
Â¥ Low-Noise, High Gain Amplifier
Â¥ Rf AMP to 1.0 Ghz
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
10 mA
Operating Junction Temperature, Tj
+150°C
Storage Temperature, Ts
– 65°C to +175°C
Devices in this Databook based on the NJ14AL Process.
Datasheet
IF140, IF140A
IF142
01/99
G
S-D
S-D
G
Die Size = 0.016" X 0.016"
All Round Bond Pads = 0.0028"
All Square Bond Pads = 0.004"
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
V_(BR)GSS
I_GSS
V_GS(OFF)
I_DSS
Dynamic Electrical Characteristics
Common Source Forward Transconductance g_fs
Common Source Input Capacitance
C_iss
Common Source Reverse Transfer Capacitance C_rss
Equivalent Noise Voltage
e¯_N
Min
– 15
– 0.5
0.5
Typ
– 22
– 2.0
10
Max
– 100
–7
20
NJ14AL Process
Unit
Test Conditions
V I_G = – 1 µA, V_DS = ØV
pA V_GS = – 10V, V_DS = ØV
V V_GS = 10V, I_D = 1 nA
mA V_DS = 10V, V_GS = ØV
5.5
mS V_DS = 10V, V_GS = ØV
f = 1 kHz
2.3
pF V_DS = 15V, V_GS = ØV
f = 1 MHz
0.5
pF V_DS = 15V, V_GS = ØV
f = 1 MHz
4
nV/√HZ V_DS = 10V, I_D = 5 mA
f = 1 kHz
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