NJ132L Datasheet, PDF (1/2 Pages) InterFET Corporation – Silicon Junction Field-Effect Transistor Low-Noise Amplifier

F-34
NJ132L Process
Silicon Junction Field-Effect Transistor
Â¥ Low-Noise Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
10 mA
Operating Junction Temperature, Tj
+150°C
Storage Temperature, Ts
– 65°C to +175°C
Devices in this Databook based on the NJ132L Process.
Datasheet
2N6451, 2N6452
2N6453, 2N6454
IF1320
IFN152
2SK152
01/99
G
S-D
S-D
G
Die Size = 0.022" X 0.022"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
NJ132L Process
Static Electrical Characteristics
Min Typ Max Unit
Test Conditions
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
V_(BR)GSS – 15 – 25
V I_G = – 1 µA, V_DS = ØV
I_GSS
– 50 – 100 nA V_GS = – 10V, V_DS = ØV
I_DSS
5
100 mA V_DS = 10V, V_GS = ØV
V_GS(OFF) – 0.5
–7
V V_DS = 10V, I_D = 1 nA
Dynamic Electrical Characteristics
Forward Transconductance
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
(pulsed) g_fs
g_fs
C_iss
C_iss
e¯_N
15
15
15
3.5
1
mS V_DS = 10V, V_GS = ØV
mS V_DS = 10V, I_D = 5 mA
pF V_DS = 10V, V_GS = ØV
pF V_DS = ØV, V_GS = – 10V
nV/√HZ V_DS = 4V, I_D = 5 mA
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 kHz
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