NJ132 Datasheet, PDF (1/2 Pages) InterFET Corporation – Silicon Junction Field-Effect Transistor

F-32
NJ132 Process
Silicon Junction Field-Effect Transistor
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Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
10 mA
Operating Junction Temperature, Tj
+150°C
Storage Temperature, Ts
– 65°C to +175°C
Devices in this Databook based on the NJ132 Process.
Datasheet
2N4391, 2N4392
2N4393
2N4856, 2N4857
2N4858, 2N4859
2N4860, 2N4861
2N4856A, 2N4857A
2N4858A, 2N4859A
Datasheet
2SK113
IFN113
2N4860A, 2N4861A
J111, J112
J113
01/99
G
S-D
S-D
G
Die Size = 0.022" X 0.022"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Drain Source ON Resistance
Input Capacitance
Feedback Capacitance
Turn On Delay Time
Rise Time
Turn Off Delay Time
NJ132 Process
Min Typ Max Unit
Test Conditions
V_(BR)GSS – 30 – 45
V I_G = – 1 µA, V_DS = ØV
I_GSS
– 10 – 100 pA V_GS = – 20V, V_DS = ØV
I_DSS
10
150 mA V_DS = 20V, V_GS = ØV
V_GS(OFF) – 0.5
–7
V V_DS = 20V, I_D = 1 nA
r_ds(on)
C_iss
C_iss
t_d(on)
t_r
t_d(off)
25
Ω I_D = 1 mA, V_GSS = ØV
f = 1 kHz
12
pF V_DS = 20V, V_GS = ØV
f = 1 MHz
2.5
pF V_DS = ØV, V_GS = – 10V
f = 1 MHz
6
ns _{VDD = – 10V, ID = 10 mA}
5
ns R_L = 10V, V_GS(ON) = ØV
50
ns ^VGS(OFF) ^{= – 6V}
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