J232 Datasheet, PDF (1/1 Pages) InterFET Corporation – N-Channel Silicon Junction Field-Effect Transistor

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B-59
J232
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T_A = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 40 V
50 mA
360 mW
3.27 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Operating Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
V_(BR)GSS
I_GSS
I_G
V_GS(OFF)
I_DSS
Common Source Forward Transconductance g_fs
Common Source Output Conductance g_os
Common Source Input Capacitance
C_iss
Common Source Reverse Transfer
Capacitance
C_rss
Equivalent Short Circuit
Input Noise Voltage
e¯_N
Min
– 40
–3
5
2500
J232
Process NJ16
Typ Max Unit
Test Conditions
V I_G = – 1 µA, V_DS = ØV
– 250 pA V_GS = – 30V, V_DS = ØV
–2
pA V_DS = 20V, I_D = ØV
–6
V V_DS = 20V, I_D = 1 µA
10
mA V_DS = 20V, V_GS = Ø V
5000 µS V_DS = 20V, V_GS = Ø V
5
µS V_DS = 20V, V_GS = Ø V
4
pF V_DS = 20V, V_GS = Ø V
1
pF V_DS = 20V, V_GS = Ø V
20
30 nV/√Hz V_DS = 10V, V_GS = Ø V
6
nV/√Hz V_DS = 10V, V_GS = Ø V
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 10 Hz
f = 1 kHz
TOÐ226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
www.interfet.com
Surface Mount
SMPJ232
1000 N. Shiloh Road, Garland, TX 75042
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