J231 Datasheet, PDF (1/1 Pages) InterFET Corporation – N-Channel Silicon Junction Field-Effect Transistor

B-58
01/99
J230, J231
N-Channel Silicon Junction Field-Effect Transistor
Â¥ Audio Amplifiers
Absolute maximum ratings at T_A = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 40 V
50 mA
360 mW
3.27 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Operating Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
V_(BR)GSS
I_GSS
I_G
V_GS(OFF)
I_DSS
Dynamic Electrical Characteristics
Common Source Forward
Transconductance
g _fs
Common Source Output Conductance g_os
Common Source Input Capacitance C_iss
Common Source Reverse
Transfer Capacitance
C_rss
Equivalent Short Circuit Input
Noise Voltage
e¯_N
J230
J231
Min Typ Max Min Typ Max Unit
– 40
– 40
V
– 250
– 250 pA
–2
–2
pA
– 0.5
– 3 – 1.5
–5 V
0.7
32
6 mA
Process NJ16
Test Conditions
I_G = – 1µA, V_DS = ØV
V_GS = – 30V, V_DS = ØV
V_DS = 20V, I_D = ØV
V_DS = 20V, I_D = 1 µA
V_DS = 20V, V_GS = ØV
1000
3500 1500
4000 µS
1.5
3
µS
4
4
pF
V_DS = 20V, V_GS = ØV
V_DS = 20V, V_GS = ØV
V_DS = 20V, V_GS = ØV
1
8 30
2
1
pF
V_DS = 20V, V_GS = ØV
8 30 nV/√Hz V_DS = 10V, V_GS = ØV
2
nV/√Hz V_DS = 10V, V_GS = ØV
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 10 Hz
f = 1 kHz
1000 N. Shiloh Road, Garland, TX 75042
[phone] FAX [phone]
TOÐ226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
Surface Mount
SMPJ230, SMPJ231
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