J210 Datasheet, PDF (1/1 Pages) NXP Semiconductors – N-channel field-effect transistors

B-56
01/99
J210, J211
N-Channel Silicon Junction Field-Effect Transistor
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Absolute maximum ratings at T_A = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 25 V
10 mA
360 mW
3.27 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Operating Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
V_(BR)GSS
I_GSS
I_G
V_GS(OFF)
I_DSS
Dynamic Electrical Characteristics
Common Source Forward
Transconductance
g _fs
Common Source Output Conductance g_os
Common Source Input Capacitance C_iss
Common Source Reverse
Transfer Capacitance
C_rss
Equivalent Short Circuit Input
Noise Voltage
e¯_N
J210
J211
Min Typ Max Min Typ Max Unit
– 25
– 25
V
– 100
– 100 pA
– 10
– 10
pA
–1
– 3 – 2.5
– 4.5 V
2
15 7
20 mA
Process NJ26L
Test Conditions
I_G = – 1µA, V_DS = ØV
V_GS = – 15V, V_DS = ØV
V_DS = 20V, I_D = 1 mA
V_DS = 15V, I_D = 1 nA
V_DS = 15V, V_GS = ØV
4000
12000 6000
12000 µS
150
4
200 µS
4
pF
1
1
pF
V_DS = 15V, V_GS = Ø V
V_DS = 15V, V_GS = ØV
V_DS = 15V, V_GS = ØV
V_DS = 15V, V_GS = ØV
10
10
nV/√Hz V_DS = 15V, V_GS = ØV
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 kHz
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TOÐ226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
Surface Mount
SMPJ210, SMPJ211
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