J175 Datasheet, PDF (1/1 Pages) Micross Components – Linear Systems replaces discontinued Siliconix J175

B-52
01/99
J174, J175
P-Channel Silicon Junction Field-Effect Transistor
Â¥ Choppers
Â¥ Commutators
Â¥ Analog Switches
Absolute maximum ratings at T_A = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 30 V
50 mA
360 mW
3.27 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Drain Cutoff Current
Dynamic Electrical Characteristics
Drain Source ON Resistance
Dynamic Electrical Characteristics
Drain Gate Capacitance
Source Gate Capacitance
Drain Gate + Source Gate Capacitance
Switching Characteristics
Turn ON Delay Time
Rise Time
Turn OFF Delay Time
Fall Time
V_(BR)GSS
I_GSS
V_GS(OFF)
I_DSS
I_D(OFF)
r_ds(on)
C_gd
C_gs
C_gd + C_gs
J174
J175
Min Max Min Max Unit
30
30
V
1
1 nA
5 10 3 6 V
– 20 – 125 – 7 – 70 mA
–1
– 1 nA
Max
Max
85
85
Ω
Typ
Typ
5.5
5.5
pF
5.5
5.5
pF
32
32
pF
td_(on)
2
5
ns
t_r
5
10
ns
td_(off)
5
10
ns
t_f
10
20
ns
Process PJ99
Test Conditions
I_G = 1 µA, V_DS = ØV
V_GS = 20V, V_DS = ØV
V_DS = – 15V, I_D = – 10 nA
V_DS = – 15V, V_GS = ØV
V_DS = – 15V, V_GS = 10V
V_GS = Ø, V_DS < = 0.1V
f = 1 kHz
V_DS = ØV, V_GS = 10V
V_DS = ØV, V_GS = 10V
V_DS = V_GS = ØV
f = 1 MHz
f = 1 MHz
f = 1 MHz
V_DD
V_GS(OFF)
R_L
V_GS(ON)
J174 J175
– 10
–6
V
12
8
V
560
1.2 k
Ω
Ø
Ø
V
1000 N. Shiloh Road, Garland, TX 75042
[phone] FAX [phone]
TOÐ226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Gate, 3 Source
Surface Mount
SMPJ174, SMPJ175
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