IXTH15N70 Datasheet, PDF (1/2 Pages) InterFET Corporation – N-Channel Enhancement Mode

MegaMOS^TMFET
N-Channel Enhancement Mode
IXTH 15N70
V_DSS
I
D (cont)
R_DS(on)
= 700 V
= 15 A
= 0.45 Ω
Symbol
Test Conditions
V_DSS
V
DGR
V_GS
V_GSM
I_D25
I_DM
P_D
T_J
T
JM
T_stg
M
d
Weight
T_J = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
700
V
700
V
±20
V
±30
V
15
A
60
A
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
6
g
300
°C
Symbol
V
DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
V
GS
=
0
V,
I
D
=
250
µA
700
V_DS = V_GS, I_D = 250 µA
2
V_GS = ±20 V_DC, V_DS = 0
V_DS = 0.8 • V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
V_GS = 10 V, I_D = 0.5 • I_D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
V
4.5 V
±100 nA
200 µA
1 mA
0.45 Ω
TO-247 AD
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
q _{International standard package}
JEDEC TO-247 AD
q _{Low R}
HDMOS^TM process
DS (on)
q _{Rugged polysilicon gate cell structure}
q _{High commutating dv/dt rating}
q _{Fast switching times}
Applications
q _{Switch-mode and resonant-mode}
power supplies
q _{Motor controls}
q _{Uninterruptible Power Supplies (UPS)}
q _{DC choppers}
Advantages
q _{Easy to mount with 1 screw}
(isolated mounting screw hole)
q _{Space savings}
q _{High power density}
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: [phone] Fax: [phone]
94503C(5/96)
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: [phone] Fax: [phone]