IFN860 Datasheet, PDF (1/1 Pages) New Jersey Semi-Conductor Products, Inc. – Dual N-Channel Silicon Junction Field-Effect Transistor

01/99
B-43
IFN860
Dual N-Channel Silicon Junction Field-Effect Transistor
Â¥ Low-Noise Audio Amplifier
Â¥ Equivalent to Crystalonics
CD860
Absolute maximum ratings at T_A = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Storage Temperature Range
– 20 V
50 mA
400 mW
2.3 mW/°C
– 65°C to 200°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Leakage Voltage
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Differential Gate Source Voltage
Dynamic Electrical Characteristics
Transconductance
Common Source Input Capacitance
Common Source Reverse Transfer
Capacitance
Equivalent Short Circuit
Input Noise Voltage
IFN860
Min Typ Max
V_(BR)GSS – 20
I_GSS
3
V_GS(OFF) – 0.3
–3
I_DSS
10
|V_GS1– V_GS2|
25
Process NJ450L
Unit
Test Conditions
V I_G = – 1 µA, V_DS = ØV
nA V_GS = – 10V, V_DS = ØV
V V_DS = 10V, I_D = 100 µA
mA V_DS = 10V, V_GS = Ø V
mV V_DS = 10V, I_D = 100 µA
g_m
25
40
mS V_DS = 10V, I_D = – 10 mA
f = 1 kHz
C_iss
30
35
pF V_DS = 10V, I_D = – 10 mA
f = 1 MHz
C_rss
17
20
pF V_DS = 10V, I_D = – 10 mA
f = 1 MHz
e¯_N
2 nV/√Hz V_DG = 3V, I_D = 10 mA
f = 1 kHz
TOÐ71 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 5 Source,
6 Drain, 7 Gate
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