IFN6449 Datasheet, PDF (1/1 Pages) InterFET Corporation – N-Channel Silicon Junction Field-Effect Transistor

B-48
01/99
IFN6449, IFN6450
N-Channel Silicon Junction Field-Effect Transistor
Â¥ High Voltage
Absolute maximum ratings at T_A = 25¡C
IFN6449 IFN6450
Reverse Gate Source Voltage
– 100 V – 100 V
Reverse Gate Drain Voltage
– 300 V – 200 V
Continuous Forward Gate Current
10 mA 10 mA
Continuous Device Power Dissipation
800 mW 800 mW
Power Derating
6.4 mW/°C 6.4 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Drain Breakdown Voltage
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source Forward
Transfer Transmittance
Common Source Output Conductance
Common Source Input Capacitance
Common Source
Reverse Transfer Capacitance
IFN6449 IFN6450
Min Max Min Max Unit
V_(BR)GDO – 300
V_(BR)GSO – 100
I_GSS
– 200
V
– 100
V
– 100 nA
– 100 µA
V_GS(OFF)
I_DSS
– 2 – 15 – 2 – 15 V
2 10 2 10 mA
| Y_fs |
g_os
C_iss
C_rss
0.5 3 0.5 3 mS
100
100 µS
10
10 pF
5
5 pF
Process NJ42
Test Conditions
I_G = – 10 µA, I_S = ØA
I_G = – 10 µA, I_D = ØA
V_GS = – 80V, V_DS = ØV
V_GS = – 80V, V_DS = ØV
V_DS = 30V, I_D = 4 nA
V_DS = 30V, V_GS = ØV
T_A = 150°C
V_DS = 30V, V_GS = ØV
V_DS = 30V, V_GS = ØV
V_DS = 30V, V_GS = ØV
V_DS = 30V, V_GS = ØV
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
TOÐ39 Package
Dimensions in Inches (mm)
1000 N. Shiloh Road, Garland, TX 75042
[phone] FAX [phone]
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
www.interfet.com