IFN5911 Datasheet, PDF (1/1 Pages) InterFET Corporation – N-Channel Dual Silicon Junction Field-Effect Transistor

01/99
B-47
IFN5911, IFN5912
N-Channel Dual Silicon Junction Field-Effect Transistor
Â¥ VHF Amplifiers
Â¥ Wideband Differential
Amplifiers
Absolute maximum ratings at T_A = 25¡C
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Storage Temperature Range
50 mA
500 mW
4 mW/°C
– 65°C to 200°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Operating Current
Gate Source Cutoff Voltage
Gate Source Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source
Forward Transconductance
Common Source
Output Conductance
Common Source Input Capacitance
Common Source
Reverse Transfer Capacitance
Equivalent Short Circuit
Input Noise Voltage
Noise Figure
Differential Gate Current
Saturation Drain Current Ratio
Differential Gate Source Voltage
Gate Source Voltage
Differential Drift
Transconductance Ratio
V_(BR)GSS
I_GSS
I_G
V_GS(OFF)
V_GS
I_DSS
IFN5911 IFN5912
Min Max Min Max Unit
– 25
– 25
V
– 100
– 100 pA
– 250
– 250 nA
– 100
– 100 pA
– 100
– 100 nA
–1 –5 –1 –5 V
– 0.3 – 4 – 0.3 – 4 V
7 40 7 40 mA
Process NJ30L or NJ36D
Test Conditions
I_G = – 1 µA, V_DS = ØV
V_GS = – 15V, V_DS = ØV
V_GS = – 15V, V_DS = ØV
V_DG = 10V, I_D = 5 mA
V_DG = 10V, I_D = 5 mA
V_DS = 10V, I_D = 1 nA
V_DS = 10V, I_D = 5 mA
V_DS = 10V, V_GS = ØV
T_A = 150°C
T_A = 125°C
g_fs
3000 10000 3000 10000 µS
3000 10000 3000 10000 µS
V_DG = 10V, I_D = 5 mA
V_DG = 10V, I_D = 5 mA
g_os
100
100 µS
V_DG = 10V, I_D = 5 mA
150
150 µS
V_DG = 10V, I_D = 5 mA
C_iss
5
5 pF
V_DG = 10V, I_D = 5 mA
C_rss
1.2
1.2 pF
V_DG = 10V, I_D = 5 mA
e¯_N
20
20 nV/√Hz V_DG = 10V, I_D = 5 mA
NF
1
1 dB
|I_G1| – |I_G2|
20
20 nA
I_DSS1 / I_DSS2 0.95 1 0.95 1
V_GS1 – V_GS2
10
15 mV
∆V_GS1 – V_GS2
20
∆T
40 µV/°C
∆V_GS1 – V_GS2
20
∆T
40 µV/°C
g_fs1 / g_fs2 0.95 1 0.95 1
V_DG = 10V, I_D = 5 mA
R_G = 100 KΩ
V_DG = 10V, I_D = 5 mA
V_DS = 10V, V_GS = ØV
V_DG = 10V, I_D = 5 mA
V_DG = 10V, I_D = 5 mA
V_DG = 10V, I_D = 5 mA
V_DG = 10V, I_D = 5 mA
f = 1 kHz
f = 100 MHz
f = 1 kHz
f = 100 MHz
f = 1 MHz
f = 1 MHz
f = 10 kHz
f = 10 Hz
T_A = 125°C
T_A = 25°C
T_B = 125°C
T_A = – 55°C
T_B = 25°C
f = 1 kHz
TOÐ78 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case,
5 Source, 6 Drain, 7 Gate, 8 Omitted
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