IFN5566 Datasheet, PDF (1/1 Pages) InterFET Corporation – N-Channel Dual Silicon Junction Field-Effect Transistor

B-46
01/99
IFN5564, IFN5565, IFN5566
N-Channel Dual Silicon Junction Field-Effect Transistor
Â¥ Wide Band Differential
Amplifier
Â¥ Commutators
Absolute maximum ratings at T_A = 25¡C.
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 40 V
50 mA
650 mW
3.3 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
V_(BR)GSS
Gate Leakage Voltage
I_GSS
Gate Source Cutoff Voltage
Gate Source Voltage
Saturation Current (Pulsed)
Static Drain Source ON Resistance
Dynamic Electrical Characteristics
V_GS(OFF)
V_GS(f)
I_DSS
rDS_(ON)
Common Source
Forward Transconductance
g_fs
Common Source Output Transconductance g_os
Common Source Input Capacitance C_iss
Common Source Reverse Transfer Capacitance C_rss
IFN5564
IFN5565
IFN5566
Min Max Min Max Min Max Unit
– 40
– 40
– 40
V
– 100
– 100
– 100 pA
– 200
– 200
– 200 nA
– 0.5 – 3 – 0.5 – 3 – 0.5 – 3 V
1
1
1V
5 30 5 30 5 30 mA
100
100
100 Ω
7000 12500 7000 12500 7000 12500 µhmo
7000
7000
7000
µhmo
45
45
45 µhmo
12
12
12 pF
3
3
3 pF
Noise Figure
NF
1
1
1 dB
Equivalent Short Circuit Input Noise Voltage e¯_N
50
50
50 nV/√Hz
Characteristics
Saturation Drain Current Ratio (Pulsed) I_DSS1
0.95 1 0.95 1 0.95 1 –
I_DSS2
–
Differential Gate Source Voltage |V_GS(1)– V_GS(2)|
5
10
20 mV
Gate Source Voltage Differential Drift ∆|V_GS(f)– V_GS(f)|
10
25
50 µV/°C
∆T
10
25
50 µV/°C
Transconductance Ratio (Pulsed)
g_fs(1)
g_fs(2)
0.95 1 0.9 1 0.9 1 –
–
Process NJ72
Test Conditions
I_G = – 1µA, V_DS = ØV
V_GS = – 20V, V_DS = ØV
V_DS = 15V, I_D = 1 nA
V_DS = ØV, I_G = 2 mA
V_DS = 15V, V_GS = ØV
I_D = 1 mA, V_GS = ØV
T_A = 150°C
V_DG = 15V, I_D = 2 mA
V_DS = 15V, I_D = 2 mA
V_DS = 15V, I_D = 2 mA
V_DS = 15V, I_D = 2 mA
V_DS = 15V, I_D = 2 mA
R_G = 1 MΩ
V_DG = 15V, I_D = 2 mA
f = 1 kHz
f = 100 MHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 10 Hz
f = 10 Hz
V_DG = 15V, V_GS = ØV
V_DS = 15V, I_D = 2 mA
V_DS = 15V,
T_A = 25°C T_B = 125°C
I_D = 2 mA
T_A = 55°C T_B = 25°C
V_DS = 15V, I_D = 2 mA
TOÐ71 Package
Dimensions in Inches (mm)
1000 N. Shiloh Road, Garland, TX 75042
[phone] FAX [phone]
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Omitted,
5 Source, 6 Drain, 7 Gate, 8 Omitted
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