English
Language : 

IFN5434 Datasheet, PDF (1/1 Pages) InterFET Corporation – N-Channel Silicon Junction Field-Effect Transistor
01/99
B-45
IFN5432, IFN5433, IFN5434
N-Channel Silicon Junction Field-Effect Transistor
Â¥ Analog Low On Resistance
Switches
Â¥ Choppers
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 25 V
100 mA
300 mW
2.4 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Drain Cutoff Current
Drain Source ON Voltage
Static Drain Source ON Resistance
Dynamic Electrical Characteristics
Drain Source ON Resistance
Common Source Input Capacitance
Common Source Reverse
Transfer Capacitance
Switching Characteristics
Turn ON Delay Time
Rise Time
Turn OFF Delay Time
Fall Time
V(BR)GSS
IGSS
VGS(OFF)
IDSS
ID(OFF)
VDS
rDS(ON)
rds(on)
Ciss
Crss
td(on)
tr
td(off)
tf
IFN5432
IFN5433
IFN5434
Min Max Min Max Min Max Unit
– 25
– 25
– 25
V
– 200
– 200
– 200 pA
– 200
– 200
– 200 nA
– 4 – 10 – 3 – 9 – 1 – 4 V
150
100
30
mA
200
200
200 pA
200
200
200 nA
50
70
100 mV
25
7
10 Ω
5
7
10 Ω
60
60
60 pF
20
20
20 pF
4
4
4 ns
1
1
1 ns
6
6
6 ns
30
30
30 ns
Process NJ903
Test Conditions
IG = – 1µA, VDS = ØV
VGS = – 15V, VDS = ØV
VGS = – 15V, VDS = ØV
VDS = 5V, IG = 3 nA
VDS = 15V, VGS = ØV
VDS = 5V, VGS = – 10V
VDS = 5V, VGS = – 10V
VGS = ØV, ID = 10 mA
VDS = ØV, ID = 10 mA
TA = 150°C
TA = 150°C
VGS = ØV, ID = ØA
VDS = ØV, VGS = – 10V
VDS = ØV, VGS = – 10V
f = 1 kHz
f = 1 MHz
f = 1 MHz
VDD = 1.5 V, VGS(ON) = ØV
VGS(OFF) = – 12V, ID(ON) = 10 mA
(IFN5432) RL = 145 Ω
(IFN5433) RL = 143 Ω
(IFN5433) RL = 140 Ω
TOÐ52 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
www.interfet.com
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375