IFN147 Datasheet, PDF (1/1 Pages) InterFET Corporation – N-Channel Silicon Junction Field-Effect Transistor

D-6
01/99
IFN147
N-Channel Silicon Junction Field-Effect Transistor
Â¥ Low-Noise Audio Amplifier
Â¥ Equivalent to Japanese 2SK147
Absolute maximum ratings at T_A = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 40 V
10 mA
300 mW
2.4 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source
Forward Transconductance
Common Source Input Capacitance
Common Source Reverse
Transfer Capacitance
Noise Figure
V_(BR)GSS
I_GSS
V_GS(OFF)
I_DSS
IFN147
Min Typ Max
– 40
–1
–1
– 0.3
– 1.2
5
30
Process NJ450
Unit
Test Conditions
V I_G = – 1 µA, V_DS = ØV
nA V_GS = – 30V, V_DS = ØV
µA V_GS = – 30V, V_DS = ØV
V V_DS = 10V, I_D = 1 µA
mA V_DS = 10V, V_GS = ØV
T_A = 150°C
g_fs
30
40
mS
V_DS = 10V, V_GS = ØV
I_DSS = 5 mA
C_iss
75
pF V_DS = 10V, V_GS = ØV
C_rss
15
pF V_DS = 10V, I_D = Ø
NF
1
dB V_DS = 10V, I_D = 5 mA
10
dB R_G = 100Ω
f = 1 kHz
f = 1 kHz
f = 1 Hz
f = 1 kHz
f = 100 Hz
TOÐ18 Package
Dimensions in Inches (mm)
1000 N. Shiloh Road, Garland, TX 75042
[phone] FAX [phone]
Pin Configuration
1 Source, 2 Gate & Case, 3 Drain
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