IFN146 Datasheet, PDF (1/1 Pages) InterFET Corporation – Dual N-Channel Silicon Junction Field-Effect Transistor

01/99
D-5
IFN146
Dual N-Channel Silicon Junction Field-Effect Transistor
Â¥ Low-Noise Audio Amplifier
Â¥ Equivalent to Japanese 2SK146
Absolute maximum ratings at T_A = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Storage Temperature Range
– 40 V
10 mA
375 mW
3 mW/°C
– 65°C to 200°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source
Forward Transconductance
Common Source Input Capacitance
Common Source Reverse
Transfer Capacitance
Noise Figure
Differential Gate Source Voltage
V_(BR)GSS
I_GSS
V_GS(OFF)
I_DSS
IFN146
Min Typ Max
– 40
–1
–1
– 0.3
– 1.2
30
Process NJ450
Unit
Test Conditions
V I_G = – 1 µA, V_DS = ØV
nA V_GS = – 30V, V_DS = ØV
µA V_GS = – 30V, V_DS = ØV
V V_DS = 10V, I_D = 1 µA
mA V_DS = 10V, V_GS = ØV
T_A = 150°C
g_fs
30
40
mS
V_DS = 10V, V_GS = ØV
I_DSS = 5 mA
C_iss
75
pF V_DS = 10V, V_GS = ØV
C_rss
15
pF V_DS = 10V, I_D = ØA
NF
|V_GS1– V_GS2|
1
dB
V_DS = 10V, I_D = 5 mA
R_G = 100Ω
20
mV V_DS = 10V, I_D = 5 mA
f = 1 kHz
f = 1 kHz
f = 1 kHz
f = 1 kHz
TOÐ71 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Gate, 3 Drain,
5 Source, 6 Gate, 7 Drain
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