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IF4511 Datasheet, PDF (1/1 Pages) InterFET Corporation – N-Channel Silicon Junction Field-Effect Transistor | |||
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01/99
B-39
IF4511
N-Channel Silicon Junction Field-Effect Transistor
Â¥ Audio Amplifier
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Storage Temperature Range
â 20 V
10 mA
300 mW
1.8 mW/°C
â 65°C to 200°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source
Forward Transconductance
Common Source Input Capacitance
Common Source
Reverse Transfer Capacitance
Equivalent Short Circuit
Input Noise Voltage
V(BR)GSS
IGSS
VGS(OFF)
IDSS
IF4511
Min Max Unit
Process NJ450H
Test Conditions
â 20
V IG = â 1 µA, VDS = ÃV
â 0.1 nA VGS = â 30V, VDS = ÃV
â 0.35 â 1.5 V
5
mA
VDS = 15V, ID = 0.5 nA
VDS = 15V, VGS = ÃV
gfs
15
mS VDS = 15V, ID = 5 mA
f = 1 kHz
Ciss
35 pF VDS = 15V, VGS = ÃV
f = 1 MHz
Crss
8
pF VDS = 15V, VGS = ÃV
f = 1 MHz
Typ
e¯N
1.5
nV/âHz VDG = 12V, VGS = ÃV
f = 1 kHz
TOÃ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
www.interfet.com
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
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