IF4500 Datasheet, PDF (1/1 Pages) InterFET Corporation – N-Channel Silicon Junction Field-Effect Transistor

B-36
01/99
IF4500
N-Channel Silicon Junction Field-Effect Transistor
Â¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings at T_A = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Storage Temperature Range
– 20 V
10 mA
225 mW
1.8 mW/°C
– 65°C to 200°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source
Forward Transconductance
Common Source Input Capacitance
Common Source
Reverse Transfer Capacitance
Equivalent Short Circuit
Input Noise Voltage
V_(BR)GSS
I_GSS
V_GS(OFF)
I_DSS
IF4500
Min Max Unit
Process NJ450L
Test Conditions
– 20
V I_G = – 1 µA, V_DS = ØV
– 0.1 nA V_GS = – 30V, V_DS = ØV
– 0.35 – 1.5 V
5
mA
V_DS = 15V, I_D = 0.5 nA
V_DS = 15V, V_GS = ØV
g_fs
15
mS V_DS = 15V, I_D = 5 mA
f = 1 kHz
C_iss
35 pF V_DS = 15V, V_GS = ØV
f = 1 MHz
C_rss
8
pF V_DS = 15V, V_GS = ØV
f = 1 MHz
Typ
e¯_N
1.5
nV/√Hz V_DS = 12V, V_GS = ØV
f = 1 kHz
TOÐ236AB Package
Dimensions in Inches (mm)
1000 N. Shiloh Road, Garland, TX 75042
[phone] FAX [phone]
Pin Configuration
1 Drain, 2 Source, 3 Gate
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