IF3602 Datasheet, PDF (1/1 Pages) InterFET Corporation – Dual N-Channel Silicon Junction Field-Effect Transistor

01/99
B-35
IF3602
Dual N-Channel Silicon Junction Field-Effect Transistor
Â¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings = T_A at 25¡C
Reverse Gate Source Voltage & Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Storage Temperature Range
– 20 V
10 mA
300 mW
4 mW/°C
– 65°C to 200°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
Common Source
Forward Transconductance
Common Source Input Capacitance
Common Source
Reverse Transfer Capacitance
Equivalent Short Circuit
Input Noise Voltage
Differential Gate Source Voltage
V_(BR)GSS
I_GSS
V_GS(OFF)
I_DSS
g_fs
C_iss
C_rss
IF3602
Min Max Unit
Process NJ3600L
Test Conditions
– 20
V I_G = – 1 µA, V_DS = ØV
– 0.5 nA V_GS = – 10V, V_DS = ØV
– 0.35 – 3
30
V V_DS = 10V, I_D = 0.5 nA
mA V_DS = 10V, V_GS = ØV
Typ
750
mS V_DS = 10V, V_GS = ØV
f = 1 kHz
300
pF V_DS = ØV, V_GS = – 4V
f = 1 MHz
200
pF V_DS = ØV, V_GS = – 4V
f = 1 MHz
e¯_N
0.3
nV/√Hz V_DG = 3V, I_D = 5 mA
f = 100 Hz
Max
| V_GS1 – V_GS2 |
100
mV V_DS = 10V, V_GS = ØV
TOÐ78 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Omitted,
5 Source, 6 Drain, 7 Gate, 8 Omitted
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